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 CMOS Imaging Technology Workshop
7 February 1996 -- San Francisco Marriott Hotel

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The recent advances in CMOS-technology have opened the possibility of imagers offering significant improvements in the functionality, power and cost of digital video and still cameras. The advent of sub-micron CMOS-technology allows pixels which contain several FETs and are circuits in their own right to be comparable in size to those existing on commercial CCD imagers . Fabrication on standard CMOS process lines permits these imagers to be fully integrated with digital circuitry to create single-chip camera systems.

The intent of this workshop was to bring together researchers, developers, and potential users of CMOS imaging technology to share their ongoing work and to acquaint circuit designers with the possibilities provided by the merging of CMOS and imaging. The program lasted a day with a series of 30 minute talks and 10 minutes discussion and question periods.

Topic
 
Speaker
Introductory Remarks
 
R. Daniel McGrath, Polaroid Corp.

Operation & analysis of CMOS active pixel sensors

 
Bedabrata Pain, JPL

Building & comparing passive & active pixels

 
Peter Denyer, VLSI Vision Limited, UK
Large area aray with non-linear active current-mode pixels
 
Vince Clark, Polaroid
Fixed-pattern noise reduction techniques in CMOS imaging arrays
 
Steve Decker, MIT
A 1024x1024 CMOS active pixel image sensor
 
Alex Dickinson, AT&T Bell Labs
Color signal processing for CMOS active pixel sensor
 
David Gibbons, AT&T Bell Labs

Analog CMOS implementation of low-level vision chips for low-power & real-time applications

 
Xavier Arreguit, CSEM, Switzerland
Technology & device scaling considerations for CMOS imagers
 
Philip Wong, IBM


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